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Volumn 205, Issue 1, 1999, Pages 123-135
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Growth mechanisms of (00.1)GaN substrates in the hydride vapour-phase method: surface diffusion, spiral growth, H2 and GaCl3 mechanisms
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Author keywords
[No Author keywords available]
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Indexed keywords
ADSORPTION;
COMPUTER SIMULATION;
CONDENSATION;
DESORPTION;
DIFFUSION;
EVAPORATION;
HYDRIDES;
MASS TRANSFER;
MATHEMATICAL MODELS;
SEMICONDUCTOR GROWTH;
SURFACE PHENOMENA;
VAPOR PHASE EPITAXY;
GALLIUM NITRIDE;
PRE EXPONENTIAL KINETIC FACTORS;
SPECIES BALANCE EQUATIONS;
SPIRAL GROWTH;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032598203
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00251-1 Document Type: Article |
Times cited : (50)
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References (24)
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