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Volumn 205, Issue 1, 1999, Pages 123-135

Growth mechanisms of (00.1)GaN substrates in the hydride vapour-phase method: surface diffusion, spiral growth, H2 and GaCl3 mechanisms

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; CONDENSATION; DESORPTION; DIFFUSION; EVAPORATION; HYDRIDES; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; VAPOR PHASE EPITAXY;

EID: 0032598203     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00251-1     Document Type: Article
Times cited : (50)

References (24)
  • 21
    • 85031634480 scopus 로고
    • Thèse Université de Clermont II, 10 Janv.
    • H. Banvillet, Thèse Université de Clermont II, 10 Janv. 1992.
    • (1992)
    • Banvillet, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.