Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 65-67

  Aujol, E ^a   Trassoudaine, A ^a   Castelluci, D ^a   Cadoret, R ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

GaN; HVPE; Kinetic modelling

Indexed keywords

COMPOSITION EFFECTS; COMPUTATIONAL METHODS; DESORPTION; QUARTZ; REACTION KINETICS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SUPERSATURATION; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); KINETIC MODELING;

SEMICONDUCTING FILMS;

EID: 0035932998     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00725-X     Document Type: Article

References (4)