Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 395-399

  Banno, N ^a   Sakamoto, T ^a   Hada, H ^a   Kasai, N ^a   Iguchi, N ^a   Imai, H ^a   Fujieda, S ^a   Ichihashi, T ^a   Hasegawa, T ^b   Aono, M ^b  

^a NEC CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

BEOL process; Nonvolatile switch; Thermal stability

Indexed keywords

BEOL PROCESS; CMOS BEOL; COMPOSITE ELECTROLYTES; DC CURRENT STRESS; DIFFUSIVITIES; HIGH THERMAL STABILITY; INTERCONNECTION LAYERS; NONVOLATILE SWITCH; RESISTANCE SWITCHING; SWITCHING CHARACTERISTICS; THERMAL BUDGET; THERMAL STABILITY; THERMAL-ANNEALING;

DURABILITY; IMPACT RESISTANCE; SILICON COMPOUNDS; SOLID ELECTROLYTES; TANTALUM; THERMODYNAMIC STABILITY;

ELECTROLYSIS;

EID: 70449108160     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173285     Document Type: Conference Paper

References (10)

1. S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, and M. Aono, "A Nonvolatile Programmable Solid-Electrolyte Nanometer Switch," IEEE J. of Solid State Circuits, vol. 40, no. 1, pp. 168-176, 2005.
2. T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, and M. Aono, "Nanometer-scale switches using copper sulfide," Appl. Phys. Lett., vol. 82, no. 18, pp. 3032-3034, 2003.
3. 5 solidelectrolyte switch with improved reliability," Symp. on VLSI Tech., Dig. Tech. Papers, pp. 38-39, 2007.
4. M. Lin, A. E. Gamal, Y. Lu, and S. Wong, "Performance benefits of monolithically stacked 3D-FPGA," Int. Symposium on Field-Programmable Gate Arrays (FPGA'06) Dig. Tech. Paper, pp. 113-122. 2006.
5. H. Fujikawa, and Y. Taga, "Effects of additive elements on electrical properties of tantalum oxide films," J. Appl. Phys., vol. 75, no. 5, pp. 2538-2544, 1994.
6. G. Raghavana, C. Chiang, P. B. Andersa, S. Tzeng, R. Villasol, G. Bai, M. Bohrb, and D. B. Frasera, "Diffusion of copper through dielectric films under bias temperature stress," Thin Solid Films, vol. 262, pp. 168-176, 1995.
7. T. Oku, E. Kawakami, M. Uekubo, K. Takahiro, S. Yamaguchi, and M. Murakami, "Diffusion barrier property of TaN between Si and Cu," Applied Surface Science, vol. 99, pp. 265-272, 1996.
8. 2 cells," Appl. Phys. Lett., vol. 92, pp. 122910-1-122910-3, 2008.
9. N. Banno, T. Sakamoto, S. Fujieda, and M. Aono, "ON-STATE RELIABILITY OF SOLID-ELECTROLYTE SWITCH," in Proc. 2008 Int. Reliabil. Phys. Symp., pp. 707-708, 2008.
10. J. Greene, E. Hamdy, and S. Beal, "Antifuse Field Programmable Gate Arrays," in Proc. of the IEEE, vol. 81, no. 7, pp. 1042-1056, 1993.