Subnanoscale lanthanum distribution in lanthanum-incorporated hafnium oxide thin films grown using atomic layer deposition

Chemistry of Materials

Volumn 22, Issue 12, 2010, Pages 3798-3806

  Wang, Tuo ^a   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; DIFFERENT STRUCTURE; EFFECTIVE MEDIUM APPROXIMATION MODELS; GROWTH CYCLE; HAFNIUM OXIDE THIN FILMS; LANTHANUM DISTRIBUTION; PHOTOELECTRON INTENSITIES; SPATIAL DISTRIBUTION; TAKE-OFF ANGLE; XPS;

ARGON; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; DATA PROCESSING; DEPOSITION; ELLIPSOMETRY; HAFNIUM; HAFNIUM OXIDES; LANTHANUM ALLOYS; LANTHANUM OXIDES; OXIDE FILMS; PHOTOIONIZATION; PHOTONS; SIZE DISTRIBUTION; THIN FILMS; VOID FRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

LANTHANUM;

EID: 77953631665     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm903386c     Document Type: Article

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