Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone

Acta Materialia

Volumn 56, Issue 4, 2008, Pages 710-718

  Katamreddy, Rajesh ^a,b   Inman, Ronald ^a   Jursich, Gregory ^a   Soulet, Axel ^a   Takoudis, Christos ^b,c  

^a Chicago Research Center Inc   (United States)

^b 1120 Science and Engineering Offices   (United States)

^c University of Illinois at Chicago   (United States)

Author keywords

Annealing; Crystallization; Dielectrics; Multi layer thin films; X ray diffraction (XRD)

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CORRELATION METHODS; CRYSTAL STRUCTURE; CRYSTALLIZATION; DIELECTRIC MATERIALS; OZONE; X RAY DIFFRACTION ANALYSIS;

FILM COMPOSITION; METAL PRECURSORS; MULTILAYER THIN FILMS;

HAFNIUM COMPOUNDS;

EID: 38749092210     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2007.10.017     Document Type: Article

References (32)

1. Terasawa N., Akimoto K., Mizuno Y., Ichimiya A., Sumitani K., Takahashi T., et al. Appl Surf Sci 244 1-4 (2005) 16-20
2. Gusev E.P., Narayanan V., and Frank M.M. IBM J Res Dev 50 4/5 (2006) 387-410
3. Quevedo-Lopez M.A., Chambers J.J., Visokay M.R., Shanware A., and Colombo L. Appl Phys Lett 87 1 (2005) 012902-012903
4. Kim J., Kim S., Kang H., Choi J., Jeon H., Cho M., et al. J Appl Phys 98 9 (2005) 094504-094507
5. Kukli K., Aarik J., Uustare T., Lu J., Ritala M., Aidla A., et al. Thin Solid Films 479 1-2 (2005) 1-11
6. Kukli K., Pilvi T., Ritala M., Sajavaara T., Lu J., and Leskela M. Thin Solid Films 491 1-2 (2005) 328-338
7. Mitchell D.R.G., Aidla A., and Aarik J. Appl Surf Sci 253 2 (2006) 606-617
8. Mukhopadhyay A.B., and Musgrave C.B. Chem Phys Lett 421 1-3 (2006) 215-220
9. Sun Q.-Q., Chen W., Ding S.-J., Xu M., Zhang D.W., and Wang L.-K. Appl Phys Lett 91 2 (2007) 022901-022903
10. Wang Y., Dai M., Ho M.T., Wielunski L.S., and Chabal Y.J. Appl Phys Lett 90 2 (2007) 022903-022906
11. Deshpande A., Inman R., Jursich G., and Takoudis C.G. A J Appl Phys 99 9 (2006) 094102/1-094102/7
12. Toyoda S., Okabayashi J., Kumigashira H., Oshima M., Ono K., Niwa M., et al. Appl Phys Lett 84 13 (2004) 2328-2330
13. Jeong S.W., Lee H.J., Kim K.S., You M.T., Roh Y., Noguchi T., et al. Thin Solid Films 515 12 (2007) 5109-5112
14. Gusev E.P., Cartier E., Buchanan D.A., Gribelyuk M., Copel M., Okorn-Schmidt H., and D'Emic C. Microelectron Eng 59 1-4 (2001) 341-349 D’Emic C
15. Robertson J. Papers from the international conference on silicon dielectric interfaces (2000), AVS, Raleigh (NC) p. 1785-91
16. Ng K.L., Zhan N., Kok C.W., Poon M.C., and Wong H. Microelectron Reliab 43 8 (2003) 1289-1293
17. Zhan N., Poon M.C., Kok C.W., Ng K.L., and Wong H. XPS J Electrochem Soc 150 10 (2003) F200-F202
18. Driemeier C., Bastos K.P., Miotti L., Baumvol I.J.R., Nguyen N.V., Sayan S., et al. Appl Phys Lett 86 22 (2005) 221911-221913
19. Nguyen N.V., Sayan S., Levin I., Ehrstein J.R., Baumvol I.J.R., Driemeier C., et al. J Vac Sci Technol A: Vac Surf Film 23 6 (2005) 1706-1713
20. Wiemer C., Fanciulli M., Crivelli B., Pavia G., and Alessandri M. Appl Phys Lett 83 25 (2003) 5271-5273
21. Blasco X., Petry J., Nafria M., Aymerich X., Richard O., and Vandervorst W. Microelectron Eng 72 1-4 (2004) 191-196
22. Zhu W.J., Tamagawa T., Gibson M., Furukawa T., and Ma T.P. Electron Dev Lett, IEEE 23 11 (2002) 649-651
23. Hong Y.-E., Kim Y.-S., Do K., Lee D., Ko D.-H., Ku J.-H., et al. J Vac Sci Technol A: Vac Surf Film 23 5 (2005) 1413-1418
24. Bae S.H., Lee C.H., Clark R., and Kwong D.L. Electron Device Lett, IEEE 24 9 (2003) 556-558
25. Terasawa N., Akimoto K., Mizuno Y., Ichimiya A., Sumitani K., Takahashi T., et al. Appl Surf Sci 12th Int Conf Solid Films Surf 244 1-4 (2005) 16-20
26. Yu H.Y., Wu N., Li M.F., Zhu C., Cho B.J., Kwong D.-L., et al. Appl Phys Lett 81 19 (2002) 3618-3620
27. Cho M.-H., Roh Y.S., Whang C.N., Jeong K., Choi H.J., Nam S.W., et al. Appl Phys Lett 81 6 (2002) 1071-1073
28. Ho M.-Y., Gong H., Wilk G.D., Busch B.W., Green M.L., Lin W.H., et al. Appl Phys Lett 81 22 (2002) 4218-4220
29. Ritala M., and Leskela M. Atomic layer deposition (2001), Academic Press, San Diego, CA
30. Katamreddy R., Inman R., Jursich G., Soulet A., and Takoudis C. J Electrochem Soc 153 10 (2006) C701-C706
31. Inman R., and Jursich G. Future Fab Int (2006) 21
32. Katamreddy R. Interfacial and structural studies of atomic layer deposited high-K materials on Si. PhD Thesis, University of Illinois at Chicago, Chicago, (IL) 2007.