Surface treatment and functionalization effects on chemical vapor deposition and atomic layer deposition grown HfO2

ECS Transactions

Volumn 6, Issue 1, 2007, Pages 167-177

  Consiglio, Steven ^a   Mo, Renee T ^a   Tai, Tsong Lin ^a   Krishnan, Siddarth A ^a   O'Meara, David ^b   Wajda, Cory ^b   Chudzik, Michael P ^a  

^a IBM MICROELECTRONICS   (United States)

^b TOKYO ELECTRON AMERICA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DRAIN CURRENT; ELECTRON TUNNELING; ELECTRONIC EQUIPMENT TESTING; GROWTH RATE; HAFNIUM OXIDES; LOGIC GATES; NITRIDATION; NITROGEN; NUCLEATION; SURFACE TREATMENT; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

FUNCTIONALIZATIONS; LINEAR DRAIN CURRENT; MONOLAYER COVERAGE; PLASMA NITRIDATION; TEST STRUCTURE; TETRAKIS(ETHYLMETHYLAMINO) HAFNIUMS; THERMAL NITRIDATION; TUNNELING CHARACTERISTICS;

ATOMIC LAYER DEPOSITION;

EID: 45849101722     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2727400     Document Type: Conference Paper

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