|
Volumn 149, Issue 1-3, 2005, Pages 37-44
|
Effective attenuation length of Al Kα-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films
|
Author keywords
Effective attenuation length; High k material; XPS
|
Indexed keywords
APPROXIMATION THEORY;
ATTENUATION;
DATABASE SYSTEMS;
ELECTRON SPECTROSCOPY;
SILICON;
X RAY PHOTOELECTRON SPECTROSCOPY;
EFFECTIVE ATTENUATION LENGTH;
HIGH-K MATERIALS;
NIST DATABASE;
PHOTOELECTRON COUNTING RATES;
THIN FILMS;
|
EID: 25144494312
PISSN: 03682048
EISSN: None
Source Type: Journal
DOI: 10.1016/j.elspec.2005.06.004 Document Type: Article |
Times cited : (7)
|
References (22)
|