Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 40-42

  Wang, Chengxin ^a   Maeda, Narihiko ^a   Hiroki, Masanobu ^a   Yokoyama, Haruki ^a   Watanabe, Noriyuki ^a   Makimoto, Toshiki ^b   Enoki, Takotoino ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Al2o 3 Si3N4 dielectric layer; Current tunneling; Field effect transistor; Gate current leakage; Metal insulator semiconductor; Thin surface barrier model

Indexed keywords

ELECTRON TUNNELING; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS;

CURRENT TUNNELING; GATE CURRENT LEAKAGE; METAL-INSULATOR-SEMICONDUCTOR; THIN SURFACE BARRIER MODEL;

FIELD EFFECT TRANSISTORS;

EID: 31544463029     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.40     Document Type: Article

References (22)

1. M. A. Khan, A. Bhattarai, J. N. Kuznia and D. T. Olsen: Appl. Phys. Lett. 63(1993) 1214.
2. N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida and N. Kobayashi: Jpn. J. Appl. Phys. 38 (1999) L987.
3. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias and T. J. Jenkins: IEEE Electron Device Lett. 20(1999) 161.
4. E. J. Miller, X. Z. Dang and E. T. Yu: J. Appl. Phys. 88 (2000) 5951.
5. H. Hasegawa, T. Inagaki, S. Ootomo and T. Hashizume: J. Vac. Sci. Technol. B 21 (2003) 1844.
6. S. Karmalkar, D. M. Sathaiya and M. S. Shur: Appl. Phys. Lett. 82 (2003) 3976.
7. E. J. Miller, E. T. Yu, P. Waltereit and S. S. Speck: Appl. Phys. Lett. 84 (2004) 535.
8. T. Hashizume, J. Kotani and H. Hasegawa: Appl. Phys. Lett. 84 (2004) 4884.
9. M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska and M. S. Shur: Appl. Phys. Lett. 77 (2000) 1339.
10. X. Hu, A. Koudymov, G. Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur and R. Gaska: Appl. Phys. Lett. 79 (2001) 2832.
11. M. A. Khan, G. Simin, J. W. Yang, J. P. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu and A. Tarakji: IEEE Trans. Electron Devices 51 (2003) 624.
12. T. Hashizume, S. Ootomo and H. Hasegawa: Appl. Phys. Lett. 83 (2003) 2952.
13. N. Maeda, T. Tawara, T. Saitho, K. Tsubaki and N. Kobayashi: Phys. Status Solidi A 200 (2003) 168.
14. N. Maeda, T. Makimura, C. X. Wang, M. Hiroki, T. Makimoto, T. Kobayashi and T. Enoki: Jpn. J. Appl. Phys. 44 (2005) 2747.
15. N. Maeda, C. X. Wang, T. Enoki, T. Makimoto and T. Tawara: Appl. Phys. Lett. 87 (2005) 073504.
16. N. Maeda, T. Makimura, T. Maruyama, C. X. Wang, M. Hiroki, H. Yokoyama, T. Makimoto, T. Kobayashi and T. Enoki: Jpn. J. Appl. Phys. 44 (2005) L646.
17. C. X. Wang, N. Maeda, M. Hiroki, T. Tawara, T. Makimoto, T. Kobayashi and T. Enoki: J. Electron. Mater. 34 (2005) 361.
18. C. X. Wang, N. Maeda, M. Hiroki, T. Tawara, T. Saitoh, T. Makimoto, T. Kobayashi and T. Enoki: Jpn. J. Appl. Phys. 44 (2005) 2735.
19. S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981) 2nd ed.
20. T. Hashizume and H. Hasegawa: Appl. Surf. Sci. 234 (2004) 387.
21. S. Hoshi, T. Marui, M. Itoh, Y. Sano and S. Seki: TWHM 2005, p. 100.
22. C. X. Wang, N. Maeda, M. Hiroki, T. Kobayashi and T. Enoki: Jpn. J. Appl. Phys. 44 (2005) 7889.