Evaluation of AlGaN/GaN-HFET with HfAlO gate insulator

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2748-2751

  Sazaw, H ^a   Hirata, K ^a   Kosaki, M ^a   Shibata, N ^a   Furuta, K ^a   Yagi, S ^b   Tanaka, Y ^b   Kinoshita, A ^b   Shimizu, M ^b   Okumura, H ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; DIELECTRIC PERMITTIVITIES; DRAIN CURRENT DENSITY; GATE BIASES; GATE CURRENT DENSITY; GATE INSULATORS; GATE LEAKAGES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; METAL-INSULATOR-SEMICONDUCTOR; NITRIDE SEMICONDUCTORS;

ADMINISTRATIVE DATA PROCESSING; CRYSTALS; CURRENT DENSITY; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; MOS CAPACITORS; NITRIDES; OPTICAL DESIGN; SEMICONDUCTOR MATERIALS; SWITCHING CIRCUITS; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 49749128389     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674920     Document Type: Conference Paper

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