Device characteristics of AlGaN/GaN MIS-HFET using Al2O 3-HfO2 laminated high-k dielectric

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 11 A, 2004, Pages

  Park, Ki Yeol ^a   Cho, Hyun Ick ^a   Choi, Hyun Chul ^a   Bae, Young Ho ^b   Lee, Chun Soo ^c   Lee, Jong Lam ^d   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Uiduk University   (South Korea)

^c Genitech Inc   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Al2O 3 HfO2 laminated dielectric; AlGaN GaN HFET; High k dielectric; Insulator; MIS

Indexed keywords

ADHESION; ALUMINUM COMPOUNDS; CAPACITANCE; ELECTRIC POTENTIAL; ETCHING; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; TRANSCONDUCTANCE;

ALGAN/GAN HFET; HIGH-K DIELECTRIC; INSULATOR; TRANSFORMER-COUPLED PLASMA (TCP);

GALLIUM NITRIDE;

EID: 11144270450     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1433     Document Type: Article

References (16)

1. S. N. Mohammad, A. A. Salvador and H. Morkoc: Proc. IEEE (IEEE, New York, 1995) Vol. 83, p. 1306.
2. O. Ambacher: J. Phys. D 31 (1998) 2653.
3. Y. F. Wu, B. P. Keller, S. Keller, J. J. Xu, B. J. Thibeault, S. P. Denbaars and U. K. Mishra: IEICE Trans. Electron. E82-C (1999) 1895.
4. S. J. Pearton, F. Ren, A. P. Zhang and K. P. Lee: Mater. Sci. & Eng. R30 (2000) 55.
5. M. A. Khan, M. S. Shur, Q. C. Chen and J. N. Kuznia: Electron. Lett. 30 (1994) 2175.
6. M. Asif Khan, X. Hu, A. Tarakji, G. Sumin, J. Yang, R. Gaska and M. S. Shur: Appl. Phys. Lett. 77 (2000) 1339.
7. M. Asif Khan, X. Hu, G. Sumin, A. Lunev, J. Yang and M. S. Shur: IEEE Electron Device Lett. 21 (2000) 63.
8. S. Ootomo, T. Hashizume and H. Hasegawa: Phys. Staus Solidi C 0 (2002) 90.
9. J. Y. Lee and B. C. Lai: Handbook of Thin Films Materials: Ferroelectric and Dielectric Thin Films, ed. S. S. Nalwa (Academic Press, San Diego, 2002) Vol. 3, Chap, 1, p. 1.
10. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
11. S. W. Choi, C. M. Jang, D. Y. Kim, J. S. Ha, H. S. Park, W. K. Y. Koh and C. S. Lee: J. Korean Phys. Soc. 42 (2003) S975.
12. D. H. Yoon, V. Kumar, J. H. Lee, R. Schwindt, W. J. Chang, J. Y. Hong, C. M. Jeon, S. B. Bae, M. R. Park, K. S. Lee, J. L. Lee and I. Adesida: Electron. Lett. 39 (2003) 566.
13. O. Katz, A. Horn, G. Bahir and J. Salzman: IEEE Trans. Electron Devices 50 (2003) 2002.
14. W. Liu: Fundamentals of III-V Devices-HBTs, MESFETs, and HFETs/HEMTs (A Wiley-Interscience Publication, New York, 1999) Chap. 5, p. 337.
15. P. A. Ivanov, M. E. Levinshtein, G. Simin, X. Hu, J. Yang, M. A. Khan, S. L. Rumyantsev, M. S. Shur and R. Gaska: Electron. Lett. 37 (2001) 1479.
16. DiVA is a registered trade mark of Accent Optical Technologies company.