High-temperature operation of AlGaN/GaN HFET with a low ON-state resistance, high breakdown voltage, and fast switching

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2908-2912

  Nomura, Takehiko ^a,b   Kambayashi, Hiroshi ^b   Masuda, Mitsuru ^b   Ishii, Sonomi ^b   Ikeda, Nariaki ^b   Jiang, Lee ^b   Yoshida, Seikoh ^b  

^a IEEE   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Contact resistance; Dynamic response; Gallium nitride; MODFETs; Passivation

Indexed keywords

GATE LEAKAGE CURRENTS; LOW REFRACTIVE INDEX; OHMIC ELECTRODES;

ALUMINUM GALLIUM NITRIDE; CONTACT RESISTANCE; DYNAMIC RESPONSE; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; REFRACTIVE INDEX; SWITCHING SYSTEMS;

MOSFET DEVICES;

EID: 33947232252     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885532     Document Type: Article

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