Atomic scale characterization of HfO2 Al2O 3 thin films grown on nitrided and oxidized Si substrates

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6113-6119

  Nishimura, T ^a,b,c   Okazawa, T ^a,b,c   Hoshino, Y ^a,b,c   Kido, Y ^a,b,c   Iwamoto, K ^b,c   Tominaga, K ^b,c   Nabatame, T ^b,c   Yasuda, T ^c   Toriumi, A ^c  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b MIRAI Project   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; FILM GROWTH; HAFNIUM COMPOUNDS; NITRIDING; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; ULTRAHIGH VACUUM;

BILAYERS; MEDIUM ENERGY; SILICATE LAYERS; SILICON SUBSTRATES;

THIN FILMS;

EID: 19144368662     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808245     Document Type: Article

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