Role of gate oxide in AlGaN/GaN high-electron-mobility transistor pH sensors

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 550-553

  Kang, B S ^a   Wang, H T ^a   Ren, F ^a   Hlad, M ^a   Gila, B P ^a   Abernathy, C R ^a   Pearton, S J ^a   Li, C ^a   Low, Z N ^a   Lin, J ^a   Johnson, J W ^b   Rajagopal, P ^b   Roberts, J C ^b   Piner, E L ^b   Linthicum, K J ^b  

^a University of Florida   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

GaN; HEMT; pH sensor

Indexed keywords

ALGAN; ELECTROLYTE SOLUTIONS; GATE OXIDES; WIRELESS DATA TRANSMISSION;

DATA COMMUNICATION EQUIPMENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PH SENSORS;

GATE DIELECTRICS;

EID: 42249091321     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0298-y     Document Type: Conference Paper

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