메뉴 건너뛰기




Volumn 18, Issue 19, 2006, Pages 2029-2031

White light emission of monolithic carbon-implanted InGaN-GaN light-emitting diodes

Author keywords

Carbon implantation; InGaN GaN multiple quantum well (MQW); Wave mix; White light emission monolithic light emitting diodes

Indexed keywords

BLUE LIGHT; BLUE LIGHT-EMITTING; CARBON-IMPLANTATION; GAN LAYERS; GAN LIGHT-EMITTING DIODES; GREEN LIGHT; INGAN-GAN MULTIPLE QUANTUM WELL (MQW); MG-DOPED; MULTIPLE QUANTUM WELLS; WHITE EMISSIONS; WHITE LIGHT EMISSION; YELLOW-GREEN LIGHT EMISSION;

EID: 33847714925     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.883322     Document Type: Article
Times cited : (75)

References (14)
  • 1
  • 4
    • 0036544438 scopus 로고    scopus 로고
    • Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip
    • Apr.
    • Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai, "Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip," Jpn. J. Appl. Phys., vol. 41, no. 4A, pp. L371-L373, Apr. 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.4 A
    • Narukawa, Y.1    Niki, I.2    Izuno, K.3    Yamada, M.4    Murazaki, Y.5    Mukai, T.6
  • 6
    • 0036508940 scopus 로고    scopus 로고
    • Phosphor free high-luminous- efficiency white light-emitting diodes composed of InGaN multiquantum well
    • Mar.
    • M. Yamada, Y. Narukawa, and T. Mukai, "Phosphor free high-luminous- efficiency white light-emitting diodes composed of InGaN multiquantum well," Jpn. J. Appl. Phys., vol. 41, no. 3A, pp. L246-L248, Mar. 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.3 A
    • Yamada, M.1    Narukawa, Y.2    Mukai, T.3
  • 9
    • 0036906374 scopus 로고    scopus 로고
    • Role of carbon in GaN
    • Dec.
    • C. H. Seager, A. F. Wright, J. Yu, and W. Götz, "Role of carbon in GaN," J. Appl. Phys., vol. 92, no. 11, pp. 6553-6560, Dec. 2002.
    • (2002) J. Appl. Phys. , vol.92 , Issue.11 , pp. 6553-6560
    • Seager, C.H.1    Wright, A.F.2    Yu, J.3    Götz, W.4
  • 11
    • 0035331470 scopus 로고    scopus 로고
    • Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature
    • May
    • Y. J. Lin, H. Y. Lee, F. T. Hwang, and C. T. Lee, "Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature," J. Electron. Mater., vol. 30, no. 5, pp. 532-537, May 2001.
    • (2001) J. Electron. Mater. , vol.30 , Issue.5 , pp. 532-537
    • Lin, Y.J.1    Lee, H.Y.2    Hwang, F.T.3    Lee, C.T.4
  • 12
    • 0001076210 scopus 로고    scopus 로고
    • Long-term thermal stability of Ti/Al/Pt/Au ohmic contacts to n-type GaN
    • Apr.
    • C. T. Lee and H. W. Kao, "Long-term thermal stability of Ti/Al/Pt/Au ohmic contacts to n-type GaN," Appl. Phys. Lett., vol. 76, no. 17, pp. 2364-2366, Apr. 2000.
    • (2000) Appl. Phys. Lett. , vol.76 , Issue.17 , pp. 2364-2366
    • Lee, C.T.1    Kao, H.W.2
  • 13
    • 0035803206 scopus 로고    scopus 로고
    • Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers
    • Dec.
    • C. S. Lee, Y. J. Lin, and C. T. Lee, "Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers," Appl. Phys. Lett., vol. 79, no. 23, pp. 3815-3817, Dec. 2001.
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.23 , pp. 3815-3817
    • Lee, C.S.1    Lin, Y.J.2    Lee, C.T.3
  • 14
    • 0001645744 scopus 로고    scopus 로고
    • Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
    • Jan.
    • C. C. Chuo, C. M. Lee, and J. I. Chyi, "Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells," Appl. Phys. Lett., vol. 78, no. 3, pp. 314-316, Jan. 2001.
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.3 , pp. 314-316
    • Chuo, C.C.1    Lee, C.M.2    Chyi, J.I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.