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Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

High-power AlGaNInGaNAlGaNGaN recessed gate heterostructure field-effect transistors

(7) Fareed, R S Qhalid a Hu, X a Tarakji, A a Deng, J a Gaska, R a Shur, M b Khan, M A c

a SENSOR ELECTRONIC TECHNOLOGY INC (United States)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

c The Department of Mechanical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; ENERGY EFFICIENCY; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THIN FILM CIRCUITS;

ELECTRIC FIELD DISTRIBUTION; GATE EDGE; MICROWAVE POWER; POWER EFFICIENCY;

FIELD EFFECT TRANSISTORS;

EID: 17444390036 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1886902 Document Type: Article

Times cited : (21)

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