High frequency and low frequency noise of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Huang, Li Hsien ^a   Yeh, Su Hao ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL OXYGEN DEMAND; CUTOFF FREQUENCY; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; METALS; OPTICAL DESIGN; OXIDATION; SEMICONDUCTOR MATERIALS; SPURIOUS SIGNAL NOISE; THERMAL NOISE; TRANSISTORS;

ALGAN/GAN; APPLICATIONS.; DRAIN-SOURCE CURRENTS; EXTRINSIC TRANSCONDUCTANCE; GAIN CUTOFF FREQUENCY; GATE INSULATORS; HIGH FREQUENCIES; LOW-FREQUENCY NOISE; MAXIMUM FREQUENCY; METAL-OXIDE SEMICONDUCTORS; PHOTOELECTROCHEMICAL OXIDATION METHOD; SATURATION REGION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 49149103737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2966142     Document Type: Article

References (19)

1. J. Piprek, R. Farrell, S. DenBaars, and S. Nakamura, IEEE Photon. Technol. Lett. 1041-1135 10.1109/LPT.2005.860045 18, 7 (2006).
2. C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, IEEE Photon. Technol. Lett. 1041-1135 10.1109/LPT.2006.883322 18, 2029 (2006).
3. J. Kim, B. P. Gila, R. Mehandru, B. Luo, A. H. Onstine, C. R. Abernathy, F. Ren, K. K. Allums, R. Dwivedi, T. N. Forgarty, R. Wilkins, Y. Irokawa, and S. J. Pearton, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.1481796 5, G57 (2002).
4. M. Higashiwaki, T. Mimura, and T. Matsui, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.881087 27, 719 (2006).
5. Y. Ohno and M. Kuzuhara, IEEE Trans. Electron Devices 0018-9383 10.1109/16.906445 48, 517 (2001).
6. P. Javorka, A. Alam, M. Wolter, A. Fox, M. Marso, M. Heuken, H. Lüth, and P. Kordoš, IEEE Electron Device Lett. 0741-3106 10.1109/55.974794 23, 4 (2002).
7. A. Endoh, Y. Yamashita, N. Hirose, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, Jpn. J. Appl. Phys., Part 1 45, 3364 (2006). 0021-4922
8. M. Marso, G. Heidelberger, K. M. Indlekofer, J. Bernát, A. Fox, P. Kordoš, and H. Lüth, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.875819 53, 1517 (2006).
9. B. Gaffey, L. J. Guido, X. W. Wang, and T. P. Ma, IEEE Trans. Electron Devices 0018-9383 10.1109/16.906436 48, 458 (2001).
10. B. P. Gila, F. Ren, and C. R. Abernathy, Mater. Sci. Eng., R. 0927-796X 10.1016/j.mser.2004.06.001 44, 151 (2004).
11. C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, J. Electron. Mater. 0361-5235 10.1007/s11664-005-0214-2 34, 282 (2005).
12. L. H. Huang and C. T. Lee, J. Electrochem. Soc. 0013-4651 10.1149/1.2766643 154, H862 (2007).
13. C. T. Lee, H. W. Chen, and H. Y. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.1584520 82, 4304 (2003).
14. C. T. Lee, H. Y. Lee, and H. W. Chen, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.807711 24, 54 (2003).
15. L. H. Huang, S. H. Yeh, C. T. Lee, H. Tang, J. Bardwell, and J. B. Webb, IEEE Electron Device Lett. 29, 284 (2008). 0741-3106
16. C. T. Lee and H. W. Kao, Appl. Phys. Lett. 0003-6951 10.1063/1.126347 76, 2364 (2000).
17. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/44/5/001 44, 479 (1981).
18. Y. Z. Chiou, Y. K. Su, J. Gong, S. J. Chang, and C. K. Wang, Jpn. J. Appl. Phys., Part 1 45, 3405 (2006). 0021-4922
19. J. M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, IEEE Trans. Electron Devices 0018-9383 10.1109/16.59916 37, 2250 (1990).