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Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

(7) Navarro, A a Rivera, C a Pereiro, J a Muoz, E a Imer, B b Denbaars, S P b Speck, J S b

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DICHROISM; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; METALS; PHOTODETECTORS; PHOTONS; POLARIZATION; SAPPHIRE; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

CRYSTAL ANISOTROPY; DIFFERENTIAL CONFIGURATION; FABRICATION AND CHARACTERIZATIONS; LINEAR DICHROISM; METAL SEMICONDUCTOR METAL; METAL SEMICONDUCTOR METAL PHOTODETECTOR; POLARIZATION SENSITIVE; POLARIZATION SENSITIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 66549128595 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3143230 Document Type: Article

Times cited : (22)

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- This value is calculated using the oscillator strengths given in the text for the A -plane GaN, and the data from Ref. for the M -plane GaN. Similar ratios can be found, for example, in P. Misra, U. Behn, O. Brandt, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 0003-6951 88, 161920 (2006). 10.1063/1.2198086
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