Analysis of oxidized p-GaN films directly grown using bias-assisted photoelectrochemical method

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 529-532

  Huang, Li Hsien ^a   Kan, Kai Chuan ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Photoelectrochemical oxidation method; Secondary ion mass spectrometry; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

CRYSTALLINE PHASE; P-GAN FILMS; PHOTO-ELECTROCHEMICAL METHODS; PHOTOELECTROCHEMICAL OXIDATION METHOD; SECONDARY-ION MASS SPECTROMETRY;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; DIFFRACTION; ELECTRON SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; IONS; MASS SPECTROMETERS; MASS SPECTROMETRY; OXIDATION; OXIDE FILMS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 61849123716     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0620-3     Document Type: Conference Paper

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