Double-recessed high-frequency AlInGaN/InGaN/GaN metal-oxide double heterostructure field-effect transistors

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 495-499

  Adivarahan, Vinod ^a   Gaevski, Mikhail E ^a,b   Islam, Md Monirul ^a   Zhang, Bin ^a   Deng, Yanqing ^a   Khan, M Asif ^a  

^a The Department of Mechanical Engineering   (United States)

^b Princeton University   (United States)

Author keywords

AlGaN; Digital oxide deposition (DOD); Double recess; Metal oxide double heterostructure field effect transistors (MOS DHFET); Subthreshold

Indexed keywords

DRAIN CURRENT; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

DIGITAL-OXIDE-DEPOSITION; DOUBLE RECESS; METAL-OXIDE DOUBLE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; SUBTHRESHOLD;

MOSFET DEVICES;

EID: 39749200276     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.913001     Document Type: Article

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