SCOPUS 정보 검색 플랫폼

Volumn 34, Issue 3, 2005, Pages 282-286

Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser

(4) Lee, Ching Ting a Chen, Hong Wei b Hwang, Fu Tsai b Lee, Hsin Ying a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Energy dispersive spectrometer (EDS); Ga2O3; GaN; Photoelectrochemical oxidation; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELECTRIC FIELD INTENSITY; GA2O3; GAN; PHOTOELECTROCHEMICAL OXIDATION;

FILM GROWTH;

EID: 17144412169 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-005-0214-2 Document Type: Article

Times cited : (28)

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