Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/poly-SiC substrates

Journal of Electronic Materials

Volumn 37, Issue 4, 2008, Pages 384-387

  Anderson, T J ^a   Ren, F ^a   Kim, J ^a   Lin, J ^a   Hlad, M ^a   Gila, B P ^a   Voss, L ^a   Pearton, S J ^a   Bove, P ^b   Lahreche, H ^b   Thuret, J ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Picogiga International SAS   (France)

Author keywords

GaN; HEMT; Wide bandgap

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; SAPPHIRE; TEMPERATURE CONTROL;

MICROWAVE PERFORMANCE; WIDE BANDGAP;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 39749177004     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0326-y     Document Type: Article

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