Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Applied Physics Letters

Volumn 90, Issue 20, 2007, Pages

  Saripalli, Y N ^a,b   Pei, L ^a   Biggerstaff, T ^a   Ramachandran, S ^a,b   Duscher, G J ^a,c   Johnson, M A L ^a   Zeng, C ^a   Dandu, K ^a   Jin, Y ^a   Barlage, D W ^a  

^a North Carolina State University   (United States)

^b APPLIED MATERIALS INC   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LATERAL OVERGROWTH; ORGANIC CHEMICAL VAPOR; OXIDESEMICONDUCTOR FIELD; REGROWTH SELECTIVITY;

CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; FIELD EFFECT TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; OHMIC CONTACTS; PLASMA ETCHING; SEMICONDUCTOR GROWTH; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 34249099082     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2741123     Document Type: Article

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