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Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

(4) Shah, V A a Dobbie, A a Myronov, M a Leadley, D R a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH QUALITY; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SI(0 0 1); SIGE VIRTUAL SUBSTRATES; SILICON GERMANIUM; THREADING DISLOCATION DENSITIES; VIRTUAL SUBSTRATES;

GERMANIUM; PRESSURE EFFECTS; SUBSTRATES; SURFACE PROPERTIES; SURFACE ROUGHNESS; TIME DIVISION MULTIPLEXING;

SILICON;

EID: 77950566506 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3311556 Document Type: Conference Paper

Times cited : (88)

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