Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2741-2747

  Isaacson, David M ^a   Dohrman, Carl L ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; GROWTH (MATERIALS); NUCLEATION; RELAXATION PROCESSES; SILICON;

DISLOCATION NUCLEATION; GRADED BUFFER GROWTH; MOBILE DISLOCATIONS; THREADING DISLOCATION DENSITIES (TDD);

DISLOCATIONS (CRYSTALS);

EID: 33845249448     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2366584     Document Type: Article

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