Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Wong, L H ^a,b   Liu, J P ^a   Romanato, F ^b,d   Wong, C C ^b   Foo, Y L ^c  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MICROELECTRONICS; OPTOELECTRONIC DEVICES; SILICON COMPOUNDS; STRAIN RATE;

EPITAXIAL LAYERS; REVERSE-GRADING (RG); STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 33846941171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472135     Document Type: Article

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