Fabrication of thick SiGe on insulator (Si0.2 Ge0.8 OI) by condensation of SiGeSi superlattice grown on silicon on insulator

Applied Physics Letters

Volumn 90, Issue 19, 2007, Pages

  Balakumar, S ^a   Peng, S ^a   Hoe, K M ^a   Lo, G Q ^a   Kumar, R ^a   Balasubramanian, N ^a   Kwong, D L ^a   Foo, Y L ^b   Tripathy, S ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; OXIDATION; RESIDUAL STRESSES; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

OXIDATION TERMINATION; SIGE-ON-INSULATOR (SGOI); THERMAL ANNEALING; X RAY DIFFRACTION MEASUREMENTS;

THICK FILMS;

EID: 34248361121     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737818     Document Type: Article

References (8)

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