Development of thin SiGe relaxed layers with high-Ge composition by ion Implantation method and application to strained Ge channels

Applied Physics Express

Volumn 1, Issue 8, 2008, Pages 0814011-0814013

  Hoshi, Yusuke ^a   Sawano, Kentarou ^a   Hiraoka, Yoshiyasu ^a   Satoh, Yuu ^a   Ogawa, Yuta ^a   Yamada, Atsunori ^a   Usami, Noritaka ^b   Nakagawa, Kiyokazu ^c   Shiraki, Yasuhiro ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; ION BOMBARDMENT; ION IMPLANTATION; IONS; MAGNETIC FIELD EFFECTS; MODULATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

GE CHANNELS; HETEROSTRUCTURE DEVICES; ION IMPLANTATION METHODS; MODULATION DOPED; RELAXED BUFFER LAYERS; RMS ROUGHNESSES; ROOM TEMPERATURES; SIGE SUBSTRATES; STRAINED CHANNELS; THREADING DISLOCATIONS; TRANSMISSION ELECTRON MICROSCOPES;

GERMANIUM;

EID: 57649096036     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.081401     Document Type: Article

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