A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface

Applied Physics Letters

Volumn 75, Issue 11, 1999, Pages 1586-1588

  Liu, J L ^a   Moore, C D ^a   U'Ren, G D ^a   Luo, Y H ^a   Lu, Y ^a   Jin, G ^a   Thomas, S G ^a   Goorsky, M S ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000807184     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124762     Document Type: Article

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