Group IV semiconductor nanowire arrays: Epitaxy in different contexts

Semiconductor Science and Technology

Volumn 25, Issue 2, 2010, Pages

  McIntyre, Paul C ^a,b   Adhikari, Hemant ^a   Goldthorpe, Irene A ^a   Hu, Shu ^a   Leu, Paul W ^a   Marshall, Ann F ^b   Chidsey, Christopher E D ^c  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; AU CATALYSTS; COAXIAL NANOWIRES; CORE/SHELL; CRYSTALLOGRAPHIC ORIENTATIONS; GE ISLAND; GERMANIUM NANOWIRES; GROUP-IV SEMICONDUCTORS; LOW TEMPERATURES; NANOWIRE GROWTH; NUCLEATION AND GROWTH; ON CHIPS; RAPID THERMAL CHEMICAL VAPOR DEPOSITIONS; SI SHELLS; SI SUBSTRATES; SUBEUTECTIC; SUBSTRATE SURFACE; SURFACE-ROUGHENING; VAPOR-LIQUID-SOLID MECHANISM; VERTICAL INTEGRATION;

AMORPHOUS SILICON; CRYSTAL GROWTH; GERMANIUM; LIQUIDS; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

NANOWIRES;

EID: 76649094299     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/2/024016     Document Type: Article

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