Stranski-Krastanow growth of germanium on silicon nanowires

Nano Letters

Volumn 5, Issue 6, 2005, Pages 1081-1085

  Pan, Ling ^a   Lew, Kok Keong ^a   Redwing, Joan M ^a   Dickey, Elizabeth C ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANE; GROWTH CONDITIONS; SILICON NANOWIRES; STRANSKI-KRASTANOW (S-K) MECHANISM;

DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

NANOSTRUCTURED MATERIALS;

GERMANIUM; NANOMATERIAL; NANOTUBE; SILANE DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SPECTROPHOTOMETRY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY;

GERMANIUM; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; SEMICONDUCTORS; SILANES; SILICON; SPECTROPHOTOMETRY; TEMPERATURE; X-RAYS;

EID: 21644438888     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050605z     Document Type: Article

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