Strain relaxation and defect formation in heteroepitaxial Si1-xGex films via surface roughening induced by controlled annealing experiments

Applied Physics Letters

Volumn 70, Issue 17, 1997, Pages 2247-2249

  Ozkan, Cengiz S ^a   Nix, William D ^a   Gao, Huajian ^a  

^a Stanford University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001188638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118819     Document Type: Article

References (11)

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11. P. Mullner, H. Gao, and C. S. Ozkan (unpublished).