Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties

Nanotechnology

Volumn 19, Issue 48, 2008, Pages

  Leu, Paul W ^a   Adhikari, Hemant ^a   Koto, Makoto ^a   Kim, Kyoung Ha ^b   De Rouffignac, Philippe ^b   Marshall, Ann F ^a   Gordon, Roy G ^b   Chidsey, Christopher E D ^c   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b HARVARD UNIVERSITY   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; CHEMICAL MECHANICAL POLISHING; DISSOLUTION; DOPING (ADDITIVES); ELECTRIC WIRE; GERMANIUM; NANOWIRES; POLISHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICA; TRANSPORT PROPERTIES;

AQUEOUS SOLUTIONS; DOPING CONCENTRATIONS; EFFICIENT METHODS; EPITAXIAL DEPOSITIONS; GE NANOWIRES; GERMANIUM NANOWIRES; P-N JUNCTIONS; P-TYPE DOPING; PARALLEL ARRAYS; SELECTIVE OXIDATIONS; SENSING APPLICATIONS; SILICON DIOXIDES; TRANSPORT MEASUREMENTS; VERTICALLY ALIGNED;

CHEMICAL POLISHING;

GERMANIUM; NANOCOATING; NANOWIRE; OXIDE; SILICON DIOXIDE;

AQUEOUS SOLUTION; ARTICLE; CLEANING; DISSOLUTION; DRUG TRANSPORT; LARGE SCALE PRODUCTION; MOLECULAR ELECTRONICS; NANOELECTROMECHANICAL SYSTEM; NANOENCAPSULATION; OXIDATION; PRIORITY JOURNAL; PROCESSING;

EID: 58149263210     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/48/485705     Document Type: Article

References (40)

1. 2 gate dielectrics Appl. Phys. Lett. 83 2432-4
2. Greytak A B, Lauhon L J, Gudiksen M S and Lieber C M 2004 Growth and transport properties of complementary germanium nanowire field-effect transistors Appl. Phys. Lett. 84 4176-8
3. Tutuc E, Appenzeller J, Reuter M C and Guha S 2006 Realization of a linear germanium nanowire p-n junction Nano Lett. 6 2070-4
4. Au F C K, Wong K W, Tang Y H, Zhang Y F, Bello I and Lee S T 1999 Electron field emission from silicon nanowires Appl. Phys. Lett. 75 1700-2
5. Cui Y, Wei Q Q, Park H K and Lieber C M 2001 Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species Science 293 1289-92
6. Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J and Lieber C M 2007 Coaxial silicon nanowires as solar cells and nanoelectronic power sources Nature 449 885-9
7. Goldberger J, Hochbaum A I, Fan R and Yang P D 2006 Silicon vertically integrated nanowire field effect transistors Nano Lett. 6 973-7
8. Schmidt V, Riel H, Senz S, Karg S, Riess W and Gosele U 2006 Realization of a silicon nanowire vertical surround-gate field-effect transistor Small 2 85-8
9. Li J, Ye Q, Cassell A, Ng H T, Stevens R, Han J and Meyyappan M 2003 Bottom-up approach for carbon nanotube interconnects Appl. Phys. Lett. 82 2491-3
10. Li J, Ng H T, Cassell A, Fan W, Chen H, Ye Q, Koehne J, Han J and Meyyappan M 2003 Carbon nanotube nanoelectrode array for ultrasensitive dna detection Nano Lett. 3 597-602
11. Choi W B et al 1999 Fully sealed, high-brightness carbon-nanotube field-emission display Appl. Phys. Lett. 75 3129-31
12. Kayes B M, Atwater H A and Lewis N S 2005 Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells J. Appl. Phys. 97 114302-11
13. Tsakalakos L, Balch J, Fronheiser J, Korevaar B A, Sulima O and Rand J 2007 Silicon nanowire solar cells Appl. Phys. Lett. 91 233117-3
14. Wang D W and Dai H J 2002 Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition Angew. Chem. Int. Edn 41 4783-6
15. Jagannathan H, Deal M, Nishi Y, Woodruff J, Chidsey C and Mclntyre P C 2006 Nature of germanium nanowire heteroepitaxy on silicon substrates J. Appl. Phys. 100 (2) 024318-10
16. Adhikari H, Marshall A F, Chidsey C E D and McIntyre P C 2006 Germanium nanowire epitaxy: shape and orientation control Nano Lett. 6 318-23
17. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
18. 2 glassy matrices Appl. Phys. Lett. 59 3168-70
19. Currie M T, Samavedam S B, Langdo T A, Leitz C W and Fitzgerald E A 1998 Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing Appl. Phys. Lett. 72 1718-20
20. Sawano K, Kawaguchi K, Koh S, Hirose Y, Hattori T, Nakagawa K and Shiraki Y 2003 Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning J. Electrochem. Soc. 150 G376-9
21. Shieh M S, Chen P S, Tsai M J and Lei T F 2006 The CMP process and cleaning solution for planarization of strain-relaxed sige virtual substrates in MOSFET applications J. Electrochem. Soc. 153 G144-8
22. Sugii N, Hisamoto D, Washio K, Yokoyama N and Kimura S 2002 Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate IEEE Trans. Electron Devices 49 2237-43
23. Li S H, Tredinnick B and Hoffman M 2000 Chemical Mechanical Polishing in Silicon Processing (Semiconductors and Semimetals vol 63) pp 139-53
24. Cerniglia N and Wang P 1962 Dissolution of germanium in aqueous hydrogen peroxide solution Electrochem. Soc. J. 109 508-12
25. x films as sacrificial layer for MEMS technology based on piezoelectric AlN: etching and planarization processes Proc. SPIE-Int. Soc. Opt. Eng. 5836 1-15
26. Woodruff J H, Ratchford J B, Goldthorpe I A, McIntyre P C and Chidsey C E D 2007 Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal Nano Lett. 7 1637-42
27. Koto M, Marshall A F and McIntyre P C 2008 unpublished
28. Hausmann D M, Kim E, Becker J and Gordon R G 2002 Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors Chem. Mater. 14 4350-8
29. Zantye P B, Kumar A and Sikder A K 2004 Chemical mechanical planarization for microelectronics applications Mater. Sci. Eng. R 45 (3-6)
30. Kim J 2007 Effective germanium surface preparation methods for nanoelectronic applications PhD Thesis Stanford University
31. Cui Y, Duan X, Hu J and Lieber C M 2000 Doping and electrical transport in silicon nanowires J. Phys. Chem. B 104 5213-6
32. Nishimura Tomonori, Kita Koji and Toriumi Akira 2007 Evidence for strong fermi-level pinning due to metal-induced gap states at metal/germanium interface Appl. Phys. Lett. 91 123123
33. Marshall E D, Wu C S, Pai C S, Scott D M and Lau S S 1985 Metal-germanium contacts and germanide formation Mat. Res. Soc. Symp. Proc. vol 47 p 161
34. Kingston R H 1956 Review of germanium surface phenomena J. Appl. Phys. 27 101-14
35. Cuttriss D B 1961 Relation between surface concentration and average conductivity in diffused layers in germanium Bell Syst. Tech. J. 40 509-21
36. Cheng G S, Kolmakov A, Zhang Y X, Moskovits M, Munden R, Reed M A, Wang G M, Moses D and Zhang J P 2003 Current rectification in a single GaN nanowire with a well-defined p-n junction Appl. Phys. Lett. 83 1578-80
37. Pieret R F 1996 Semiconductor Device Fundamentals (New York: Addison-Wesley Longman)
38. Adhikari H, McIntyre P C, Sun S Y, Pianetta P and Chidsey C E D 2005 Photoemission studies of passivation of germanium nanowires Appl. Phys. Lett. 87 263109
39. Adhikari H, Marshall A F, Goldthorpe I A, Chidsey C E D and McIntyre P C 2007 Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature ACS Nano 1 415-22
40. 6 Appl. Phys. Lett. 88 043113