Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Nah, Junghyo ^a   Liu, E S ^a   Shahrjerdi, D ^a   Varahramyan, K M ^a   Banerjee, S K ^a   Tutuc, E ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; D REGION; ELECTRIC WIRE; GERMANIUM; HAFNIUM COMPOUNDS; ION BOMBARDMENT; ION IMPLANTATION; MESFET DEVICES; NANOWIRES; TANTALUM COMPOUNDS; TRANSISTORS;

ATOMIC LAYERS; CORE-SHELL NANOWIRES; ELECTRICAL CHARACTERISTICS; FIELD EFFECTS; GATE METAL DEPOSITIONS; GATE OXIDES; LOW ENERGIES; ON/OFF CURRENT RATIOS; ORDERS OF MAGNITUDES; SILICON GERMANIUMS; SOURCE AND DRAINS;

FIELD EFFECT TRANSISTORS;

EID: 60349088181     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079410     Document Type: Article

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