Control of Si nanowire growth by oxygen

Nano Letters

Volumn 6, Issue 6, 2006, Pages 1292-1296

  Kodambaka, Suneel ^a   Hannon, James B ^a   Tromp, Rudolf M ^a   Ross, Frances M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS-PHASE; SEMICONDUCTOR NANOWIRES; SURFACE-BOUND OXYGEN;

CATALYSTS; DIFFUSION; SEMICONDUCTOR MATERIALS; SILANES; SILICON; THERMAL EFFECTS;

NANOSTRUCTURED MATERIALS;

NANOMATERIAL; OXYGEN; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; HEAT; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC WIRING; HEAT; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; OXYGEN; PARTICLE SIZE; SILICON;

EID: 33745746063     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl060059p     Document Type: Article

References (28)

1. Wagner, R. S.; Ellis, W. C. Appl. Phys. Lett. 1964, 4, 89.
2. Wagner, R. S. In Whisker Technology; Levitt, A. P., Ed.; Wiley-Interscience: New York, 1970.
3. Givargizov, E. I. J. Cryst. Growth 1975, 31, 20.
4. Haraguchi, K.; Katsuyama, T.; Hiruma, K.; Ogawa, K. Appl. Phys. Lett. 1992, 60, 745.
5. Duan, X.; Huang, Y.; Cui, Y.; Wang, J.; Lieber, C. M. Nature 2001, 409, 66.
6. Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. Science 2001, 293, 1455.
7. Cui, Y.; Lieber, C. M. Science 2001, 291, 851.
8. Huang, Y.; Duan, X.; Cu, Y.; Lauhon, L. J.; Kim, K.-H.; Lieber, C. M. Science 2001, 294, 1313.
9. Bjork, M. T.; Ohlsson, B. J.; Thelander, C.; Persson, A. I.; Deppert, K.; Wallenberg, L. R.; Samuelson, L. Appl. Phys. Lett. 2002, 81, 4458.
10. De Franceschi, S.; van Dam, J. A.; Bakkers, E. P. A. M.; Feiner, L. F.; Gurevich, L.; Kouwenhoven, L. P. Appl. Phys. Lett. 2003, 83, 344.
11. Law, M.; Goldberger, J.; Yang, P. Annu. Rev. Mater. Res. 2004, 34, 83.
12. Cui, Y.; Wei, Q.; Park, H.; Lieber, C. M. Science 2001, 293, 1289.
13. Islam, M. S.; Sharma, S.; Kamins, T. I.; Williams, R. S. Nanotechnology 2004, 15, L5.
14. Hannon, J. B.; Kodambaka, S.; Ross, F. M.; Tromp, R. M. Nature 2006, 440, 69.
15. Hammar, M.; LeGoues, F. K.; Tersoff, J.; Reuter, M. C.; Tromp, R. M. Surf. Sci. 1996, 349, 129.
16. Tromp, R. M.; Reuter, M. C. Ultramicroscopy 1991, 36, 99.
17. Schubert, L.; Werner, P.; Zacharov, N. D.; Gerth, G.; Kolb, F. M.; Long, L.; Goesele, U.; Tan, T. Y. Appl. Phys. Lett. 2004, 84, 4968.
18. Kodambaka, S.; Tersoff, J.; Reuter, M. C.; Ross, F. M. Phys. Rev. Lett. 2006, 96, 096105.
19. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.: Wang, J.; Lieber, C. M. Appl. Phys. Lett. 2001, 78, 2214.
20. Schmidt, V.; Senz, S.; Goesele, U. Nano Lett. 2005, 5, 931.
21. Hiraki, A.; Lugujjo, E.; Mayer, J. W. J. Appl. Phys. 1972, 43, 3643.
22. Tatsumi, T.; Aizaki, N.; Tsuya, H. Jpn. J. Appl. Phys. 1985, 24, L227.
23. Kunii, Y.; Sakakibara, Y. Jpn. J. Appl. Phys. 1987, 26, 1816.
24. Jun, W.; Mitchell, C. E. J.; Egdell, R. G.; Foord, J. S. Surf. Sci. 2002, 506, 66.
25. Morales, A. M.; Lieber, C. M. Science 1998, 279, 208.
26. Westwater, J.; Gosain, D. P.; Tomiya, S.; Usui, S.; Ruda, H. J. Vac. Sci. Technol. 1997, B15, 554.
27. Kikkawa, J.; Ohno, Y.; Takeda, S. Appl. Phys. Lett. 2005, 86, 123109.
28. Kolb, F. M.; Hofmeister, H.; Scholz, R.; Zacharias, M.; Gösele, U.; Ma, D. D.; Lee S.-T. J. Electrochem. Soc. 2004, 151, G472.