Single-crystal germanium layers grown on silicon by nanowire seeding

Nature Nanotechnology

Volumn 4, Issue 10, 2009, Pages 649-653

  Hu, Shu ^a   Leu, Paul W ^a   Marshall, Ann F ^b   McIntyre, Paul C ^a,b  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTAL ORIENTATION; GERMANIUM; MONOCRYSTALLINE SILICON; NANOWIRES; SILICON WAFERS; SINGLE CRYSTALS; THREE DIMENSIONAL INTEGRATED CIRCUITS;

ACTIVE DEVICE LAYERS; ELECTRONICS RESEARCH; GERMANIUM NANOWIRES; GERMANIUM ON SILICONS; ONE-DIMENSIONAL STRUCTURE; SINGLE-CRYSTAL GERMANIUM; THREE DIMENSIONAL INTEGRATION; THREE-DIMENSIONAL CIRCUITS;

SUBSTRATES;

GERMANIUM; NANOWIRE; SILICON;

ARTICLE; CONTROLLED STUDY; CRYSTAL; CRYSTALLIZATION; PARTICLE SIZE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70350668422     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.233     Document Type: Article

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