The shape of epitaxially grown silicon nanowires and the influence of line tension

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 3, 2005, Pages 445-450

  Schmidt, V ^a   Senz, S ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); EPITAXIAL GROWTH; FUNCTIONS; MATHEMATICAL MODELS; SILICON; SURFACE TENSION;

AXIAL GROWTH; LINE TENSION; NANOWIRES; QUASI-STATIC MODELS;

NANOSTRUCTURED MATERIALS;

EID: 10844258960     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3092-1     Document Type: Article

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