Conditions for subeutectic growth of Ge nanowires by the vapor-liquid-solid mechanism

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Adhikari, Hemant ^a   McIntyre, Paul C ^a   Marshall, Ann F ^b   Chidsey, Christopher E D ^c  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GERMANIUM; MELTING POINT; PARTIAL PRESSURE; PRESSURE EFFECTS;

CATALYST NANOPARTICLES; SUBEUTECTIC TEMPERATURES; TEMPERATURE LIMIT; VAPOR-LIQUID-SOLID MECHANISM;

NANOWIRES;

EID: 36248992277     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2803893     Document Type: Article

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