Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia

Volumn 58, Issue 6, 2010, Pages 2165-2175

  Reitmeier, Z J ^a   Einfeldt, S ^a   Davis, R F ^a   Zhang, Xinyu ^b   Fang, Xialong ^b   Mahajan, S ^b  

^a North Carolina State University   (United States)

^b Arizona State University   (United States)

Author keywords

AFM; Dislocations; Group III nitrides; Heteroepitaxy; MOCVD

Indexed keywords

AFM; ALN; ALN FILMS; ALN LAYERS; DEFECT MICROSTRUCTURE; ETCHED SUBSTRATES; FLOW MECHANISMS; GAN FILM; GAN ISLANDS; GROUP III NITRIDES; GROWTH PITS; HETEROEPITAXY; INITIAL STAGES; ISLAND NUCLEATION; LOWER DENSITY; MECHANICAL POLISHING; MISFIT DISLOCATIONS; MOCVD; OFF-AXIS; STEP EDGE; THREADING DISLOCATION; UNIT CELLS; X RAY ROCKING CURVE;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COALESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; HYDROGEN; LANDFORMS; SILICON CARBIDE; SOIL CONSERVATION; SUBSTRATES;

GALLIUM ALLOYS;

EID: 76249125849     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.12.002     Document Type: Article

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