Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Thin Solid Films

Volumn 437, Issue 1-2, 2003, Pages 140-149

  Miraglia, P Q ^a   Preble, E A ^b   Roskowski, A M ^b   Einfeldt, S ^c   Lim, S H ^d   Liliental Weber, Z ^d   Davis, R F ^b  

^a NORTHEASTERN UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c UNIVERSITY OF BREMEN   (Germany)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Atomic force microscopy; Indium gallium nitride; Metalorganic vapor phase epitaxy; Surface defects

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; QUANTUM THEORY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE REACTIONS; SURFACE ROUGHNESS;

SURFACE DEFECTS;

THIN FILMS;

EID: 0038448071     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00611-4     Document Type: Article

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