Nucleation of dislocations during physical vapor transport growth of silicon carbide

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Sanchez, E K ^a   Heydemann, V D ^b   Snyder, D W ^b   Rohrer, G S ^a   Skowronski, M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b II VI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); INCLUSIONS; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION;

EDGE DISLOCATIONS; PHYSICAL VAPOR TRANSPORT (PVT); SCREW DISLOCATIONS;

SILICON CARBIDE;

EID: 0033722875     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)

1. P. G. Neudeck, W. Huang, M. Dudley, Mat. Res. Soc. Symp. Proc., 483 (1998), p. 285.
2. P. G. Neudeck, J. A. Powell, IEEE Electron Device Lett., 15 (1994), p. 63.
3. R. C. Glass, D. Henshall, V. F. Tsvetkov, C. H. Carter, Jr., Phys. Stat. Sol. (b), 202 (1997), p. 149.
4. J. Takahashi, N. Ohtani, M. Kanaya, J. Cryst. Growth, 167 (1996), p. 596.
5. P. Pirouz, Mat. Res. Soc. Symp. Proc., 512 (1998), p. 113.
6. M. Dudley, X. R. Huang, W. Huang, App. Phy. Lett., 75 (1999), p. 784.
7. J. A. Powell, D. J. Larkin, Phys. Stat. Sol. (b), 202 (1997), p. 529.
8. D. Hofmann, E. Schmitt, M. Bickermann, M. Kolbl, P. J. Wellmann, A. Winnacker, Mat. Sci. Eng., B61 (1999), p. 48.
9. V. Ramachandran, M. F. Brady, A. R. Smith, R. M. Feenstra, D. W. Greve, J. Elec. Mat., 27 (1998), p. 308.
10. E. K. Sanchez, V. Heydemann, T. Kuhr, G. S. Rohrer, M. Skowronski, J. Elec. Mat. (1999), submitted.
11. D. L. Barret, R. G. Seidensticker, W. Gaida, R. H. Hopkins, W. J. Choyke, J. Cryst. Growth, 109 (1991), p. 17.
12. J. Takahashi, M. Kanaya, Y. Fujiwara, J. Cryst. Growth, 135 (1994), p. 61.
13. J. Heindl, H. P. Strunk, V. D. Heydemann, G. Pensl, Phys. Stat. Sol. (b), 202 (1997), p. 251.