Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 686-688

  Twigg, M E ^a   Henry, R L ^a   Wickenden, A E ^a   Koleske, D D ^a   Culbertson, J C ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; GRAIN SIZE AND SHAPE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ALUMINUM NITRIDE; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032621994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124482     Document Type: Article

References (18)

1. T. Lei, K. F. Ludwig, Jr., and T. Moustakas, J. Appl. Phys. 74, 4430 (1993).
2. G. Popovici, W. Kim, A. Botchkarev, H. Tang, and H. Morkoc, Appl. Phys. Lett. 71, 3385 (1997).
3. N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W.-J. Choi, A. E. Bond, X. Zhang, and D. H. Rich, Appl. Phys. Lett. 71, 3569 (1997).
4. G. Y. Zhang, Y. Z. Tong, Z. J. Yang, S. X. Jin, J. Li, and Z. Z. Gan, Appl. Phys. Lett. 71, 3376 (1997).
5. X. H. Wu, L. M. Brown, D. Kapolnik, S. Keller, B. Keller, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 80, 3228 (1996).
6. F. A. Ponce, D. Cherns, W. T. Young, and J. W. Steeds, Appl. Phys. Lett. 69, 770 (1996).
7. L. T. Romano, J. E. Northurp, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996).
8. M. Fatemi, A. E. Wickenden, D. D. Koleske, M. E. Twigg, J. A. Freitas, Jr., R. L. Henry, and R. J. Gorman, Appl. Phys. Lett. 73, 608 (1998).
9. H. Kromer, J. Cryst. Growth 81, 193 (1987).
10. P. A. Grudowski, A. L. Holmes, C. J. Eiting, and R. D. Dupuis, J. Electron. Mater. 26, 257 (1997).
11. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
12. X. H. Wu, D. Kapolniek, E. J. Tarsa, B. Heyring, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 67, 1371 (1996).
13. F. Donald Bloss, Crystallography and Crystal Chemistry (Holt, Rhinehart, and Winston, New York, 1971), p. 252.
14. R. Beanland, C. J. Kiely, and R. C. Pond, in Handbook on Semiconductors, edited by S. Mahajan (North-Holland, Amsterdam, 1994), Vol. 3a, Chap. 15.
15. R. Beanland (private communication).
16. D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson, and R. J. Gorman, Appl. Phys. Lett. 73, 2018 (1998).
17. A. E. Wickenden, D. D. Koleske, R. L. Henry, R. J. Gorman, J. C. Culbertson, and M. E. Twigg, J. Electron. Mater. 28, 301 (1999).
18. X. H. Wu, P. Fini, S. Keller, E. J. Tarsa, B. Heying, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Jpn. J. Appl. Phys., Part 2 35, L1648 (1996).