Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001)

Applied Physics Letters

Volumn 74, Issue 24, 1999, Pages 3660-3662

  Waltereit, P ^a   Brandt, O ^a   Trampert, A ^a   Ramsteiner, M ^a   Reiche, M ^a   Qi, M ^a,b   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS; WETTING;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY; STRAIN STATE;

SEMICONDUCTING FILMS;

EID: 0032615107     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123214     Document Type: Article

References (15)

1. W. G. Perry, T. Zheleva, M. D. Bremser, R. F. Davis, W. Shan, and J. J. Song, J. Electron. Mater. 26, 224 (1997).
2. V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobsen, and O. K. Semchinova, J. Appl. Phys. 82, 5097 (1997).
3. N. V. Edwards, M. D. Bremser, R. F. Davis, A. D. Batchelor, S. D. Yoo, C. F. Karan, and D. E. Aspnes, Appl. Phys. Lett. 73, 2808 (1998).
4. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996).
5. S. Porowski, J. Cryst. Growth 189/190, 153 (1998).
6. S. Tanaka, S. Iwai, and Y. Aoyagi, J. Cryst. Growth 170, 329 (1997).
7. R. F. Davis, T. W. Weeks, Jr., M. D. Bremser, S. Tanaka, R. S. Kern, Z. Sitar, K. S. Ailey, W. G. Perry, and C. Wang, Mater. Res. Soc. Symp. Proc. 287, 3 (1995).
8. B. Monemar, in Gallium Nitride (GaN) I, Semiconductors and Semimetals, Volume 50, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, 1998), p. 305.
9. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Lilienthal-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17745 (1996).
10. J. Krüger, G. S. Sudhir, D. Corlatan, Y. Cho, Y. Kim, R. Klockenbrink, S. Roumimov, Z. Lilienthal-Weber, C. Kisielowski, M. Rubin, and E. R. Weber, Mater. Res. Soc. Symp. Proc. 482, 447 (1998).
11. K. Kim, W. R. L. Lambrecht, and B. Segall, Phys. Rev. B 53, 16310 (1996).
12. 1 ≈-0.1% [see, for example: S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura, Appl. Phys. Lett. 68, 3766 (1996); B. Jogai, Phys. Rev. B 57, 2382 (1998)] is ignored here due to its negligible influence for the range of strain under study.
13. 1 ≈-0.1% [see, for example: S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura, Appl. Phys. Lett. 68, 3766 (1996); B. Jogai, Phys. Rev. B 57, 2382 (1998)] is ignored here due to its negligible influence for the range of strain under study.
14. M. Tchounkeu, O. Briot, B. Gil, J. P. Alexis, and R.-L. Aulombard, J. Appl. Phys. 80, 5352 (1996).
15. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 81, 6332 (1997).