Material contrast in SEM: Fermi energy and work function effects

Ultramicroscopy

Volumn 110, Issue 3, 2010, Pages 242-253

  Cazaux, Jacques ^a  

^a Faculty of Sciences   (France)

Author keywords

Image simulation; Material and doping contrast; Scanning electron microscopy; Secondary electron emission; Semiconductors and semiconducting devices

Indexed keywords

APEX ANGLES; APRIORI; ELECTRONIC DEVICE; FERMI ENERGY; GREY LEVELS; IMAGE SIMULATION; IMAGE SIMULATIONS; INCIDENT BEAMS; N-DOPED; SCANNING ELECTRON MICROSCOPES; SECONDARY ELECTRON EMISSIONS; SECONDARY ELECTRONS; SEM; SEM IMAGE; SIMPLE GEOMETRIES; SOLID ANGLE; VACUUM GAP; VOLTAGE CONTACTS;

DETECTORS; ELECTRONS; FERMI LEVEL; FERMIONS; GERMANIUM; LEAD; PALLADIUM; PHOSPHORUS; PLATINUM; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SEMICONDUCTOR DOPING; SILVER; SPONTANEOUS EMISSION; VACUUM; WORK FUNCTION; ZINC;

SILICON;

COPPER; GOLD; LEAD; PALLADIUM; PLATINUM; SILICON; ZINC;

ARTICLE; CONTROLLED STUDY; ELECTRIC POTENTIAL; ELECTRON BEAM; ELECTRONICS; MATERIAL COATING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SIMULATION; VACUUM;

EID: 75849145807     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2009.12.002     Document Type: Article

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