Imaging of the boron doping in silicon using low energy SEM

Ultramicroscopy

Volumn 93, Issue 3-4, 2002, Pages 223-243

  Müllerová, Ilona ^a   El Gomati, Mohamed M ^b   Frank, Luděk ^a  

^a INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Czech Republic)

^b UNIVERSITY OF YORK   (United Kingdom)

Author keywords

Electron and ion microscopes and techniques; Electron microscopy determination of structures; Semiconductor doping

Indexed keywords

BACKSCATTERING; CONTAMINATION; DOPING (ADDITIVES); ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPY; SILICON; SPECTROMETERS;

SCANNING ELECTRON IMAGING;

BORON;

BORON;

ARTICLE; CONTAMINATION; DOPING; ELECTRIC FIELD; ELECTRON BEAM; ELECTRONICS; ENERGY; IMAGING; SCANNING ELECTRON IMAGING; SCANNING ELECTRON MICROSCOPY; SCANNING LOW ENERGY ELECTRON MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; TECHNIQUE;

EID: 0036891013     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(02)00279-6     Document Type: Article

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