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Volumn 230, Issue 1, 2008, Pages 76-83

Two-dimensional dopant profiling with low-energy SEM

Author keywords

Dopant contrast; Low energy SEM; Semiconductors

Indexed keywords

SECONDARY EMISSION; SEMICONDUCTOR DOPING;

EID: 41749102403     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2008.01957.x     Document Type: Article
Times cited : (17)

References (12)
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    • Mika, F. & Frank, L. (2006) Imaging of dopants in semiconductors with the secondary electrons in a low energy SEM. Proc. 10th Int. Semin. on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno : ISI ASCR (I. Müllerová, ed 47 48.
    • (2006) Imaging of Dopants in Semiconductors with the Secondary Electrons in a Low Energy SEM , pp. 47-48
    • Mika, F.1    Frank, L.2
  • 7
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    • Perovic, D.D.1    Castell, M.R.2    Howie, A.3    Lavoie, C.4    Tiedje, T.5    Cole, J.S.6
  • 10
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    • Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector
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    • Schönjahn, C., Broom, R.F., Humphreys, C.J., Howie, A. & Mentink, S.A.M. (2003) Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Appl. Phys. Lett. 83, 293 295.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 293-295
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    • Mechanism for secondary electron dopant contrast in the SEM
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  • 12
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    • Quantitative two-dimensional dopant profiles obtained directly from secondary electron images
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.