Very-low-energy electron microscopy of doped semiconductors

Applied Physics Letters

Volumn 79, Issue 18, 2001, Pages 2931-2933

  El Gomati, M M ^a   Wells, T C R ^a  

^a UNIVERSITY OF YORK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001086433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415045     Document Type: Article

References (10)

1. A. Howie, J. Microsc. 180, 192 (1995).
2. D. D. Perovic, M. R. Castell, A. Howie, C. Lavoie, T. Tiedje, and J. S. Cole, Ultramicroscopy 58, 104 (1995).
3. D. Venables and D. M. Maher, J. Vac. Sci. Technol. B 14, 421 (1996).
4. D. Venables, H. Jain, and D. C. Collins, J. Vac. Sci. Technol. B 16, 362 (1998).
5. C. P. Sealy, M. R. Castell, A. J. Wilkenson, and P. Wilshaw, Inst. Phys. Conf. Ser. 146, 609 (1997).
6. I. Mullerova, I. Comp. Assisted Microsc. 9, 97 (1997).
7. T. J. Grant, Surf. Sci. 24, 332 (1971).
8. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
9. W. S. M. Werner, Surf. Interface Anal. 31, 141 (2001).
10. M. El-Gomati, I. Mullerova, and L. Frank, The Electron (IOM Communication, London, 1998), pp. 216-222.