Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast

Microelectronic Engineering

Volumn 84, Issue 3, 2007, Pages 413-418

  Buzzo, M ^a,b   Ciappa, M ^b   Millan, J ^c   Godignon, P ^c   Fichtner, W ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b ETH ZURICH   (Switzerland)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONS; IMAGE PROCESSING; IRRADIATION; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

DOPANT PROFILING; ELECTRIC FIELD IRRADIATING; SECONDARY ELECTRONS POTENTIAL CONTRAST MAPS; SILICON CARBIDE DEVICES;

MICROELECTRONICS;

EID: 33846903022     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.055     Document Type: Article

References (12)

1. Buzzo M., Ciappa M., Stangoni M., and Fichtner W. Microelectronics Reliability 45 (2005) 1499-1504
2. Buzzo M., Leicht M., Schweinböck T., Ciappa M., Stangoni M., and Fichtner W. Microelectronics Reliability 44 (2004) 1681-1686
3. Oatley C.W., and Everhart T.E. Journal of Electronics (1957) 568-570
4. Turan R., Perovic D.D., and Houghton D.C. Applied Physics Letters 69 11 (1996) 1593-1595
5. M. Buzzo, M. Ciappa, W. Fichtner. In: Proceedings of IPFA 2005, Singapore, 2005, pp. 105-109.
6. M. Buzzo, M. Ciappa, W. Fichtner. IEEE Transaction on Material and Devices Reliability (accepted for publication).
7. http://www.synopsys.com.
8. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts (1988), Clarendon Press, Oxford
9. Sze S.M. Semiconductor Devices Physics and Technology (1985), John Wiley & Sons
10. Schönjahn C., Broom R.F., Humphreys C.J., Howie A., and Mentik S.A.M. Applied Physics Letters 83 2 (2003) 293-295
11. M. Stangoni, Scanning probe techniques for dopant profile characterization, PhD Thesis No. 16024, ETH-Zurich, 2005.
12. Morvan E., Godignon P., Montserrat J., Fernández J., Flores D., Millán J., and Chante J.P. Materials Science and Engineering B. 46 (1997) 218-222