The role of oxygen in secondary electron contrast in doped semiconductors using low voltage scanning electron microscopy

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Walker, C G H ^a   Zaggout, F ^b   El Gomati, M M ^a  

^a UNIVERSITY OF YORK   (United Kingdom)

^b Misurata University   (Libyan Arab Jamahiriya)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; FIELD EMISSION; OXYGEN; PHOSPHORUS; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

CONTRAST VARIATIONS; DOPANT CONCENTRATIONS; DOPANT CONTRASTS; DOPED SEMICONDUCTORS; EMISSION OF ELECTRONS; INITIAL TREATMENTS; LOW VOLTAGE SCANNING ELECTRON MICROSCOPIES; N-DOPED; NANOSCALE DIMENSIONS; OXIDE THICKNESSES; PRIMARY BEAM ENERGIES; PRIMARY ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPES; SECONDARY ELECTRON CONTRASTS; SEMI-CONDUCTORS; SEMICONDUCTOR INDUSTRIES;

DOPING (ADDITIVES);

EID: 58149229122     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3039804     Document Type: Article

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