The origin of contrast in the imaging of doped areas in silicon by slow electrons

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Frank, Luděk ^a   Müllerová, Ilona ^a   Valdaitsev, Dimitrii A ^b   Gloskovskii, Andrei ^b   Nepijko, Sergei A ^b   Elmers, Hans Joachim ^b   Schönhense, Gerd ^b  

^a INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Czech Republic)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CRYSTAL STRUCTURE; PHOTOEMISSION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON;

FAST IMAGING METHODS; HOT ELECTRONS; IMAGE CONTRASTS;

IMAGING SYSTEMS;

EID: 33751096142     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364044     Document Type: Article

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