On some contrast reversals in SEM: Application to metal/insulator systems

Ultramicroscopy

Volumn 108, Issue 12, 2008, Pages 1645-1652

  Cazaux, Jacques ^a  

^a Faculty of Sciences   (France)

Author keywords

Charging contrast; Image simulation; Material contrast; Scanning electron microscopy; Secondary electron emission; SEM metrology and testing; Topographic contrast

Indexed keywords

ANGULAR DISTRIBUTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON EMISSION; IMAGE ENHANCEMENT; INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

CHARGING CONTRAST; IMAGE SIMULATION; MATERIAL CONTRAST; SCANNING ELECTRON MICROSCOPY; SECONDARY ELECTRON EMISSION; SEM METROLOGY AND TESTING; TOPOGRAPHIC CONTRAST;

SECONDARY EMISSION;

METAL;

ARTICLE; INSULATOR ELEMENT; IRRADIATION; SCANNING ELECTRON MICROSCOPY; SIMULATION;

EID: 53249115204     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.06.005     Document Type: Article

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